InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax

InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure.

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Published in:IEEE electron device letters 2005-01, Vol.26 (1), p.11
Main Authors: Griffith, Z, Dahlstrom, M, Rodwell, M.J.W, Fang, X.-M, Lubyshev, D, Wu, Y, Fastenau, J.M, Liu, W.K
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container_issue 1
container_start_page 11
container_title IEEE electron device letters
container_volume 26
creator Griffith, Z
Dahlstrom, M
Rodwell, M.J.W
Fang, X.-M
Lubyshev, D
Wu, Y
Fastenau, J.M
Liu, W.K
description InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure.
doi_str_mv 10.1109/LED.2004.840715(410)26
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_1018689257</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2679266471</sourcerecordid><originalsourceid>FETCH-proquest_journals_10186892573</originalsourceid><addsrcrecordid>eNqNistOwkAUQCdEEqvwC-YmbHQx9d52po-lPKRNXLhgB4RcbQtDcAqdVo1fD4l-gKuTnHOEuCP0iTB9fJlN_QBR-YnCmPS9InwIop7wSOtEoo7CK-FhrEiGhNG1uHFuj0hKxcoTq9zO-cnJ3L7CNBsvHFR1A8a-NyW7soDCbE3LB8gn8Ma2-DJFu4Mdfxq7BYYwJTnPfqBattyt4TKARv2rPvh7IPoVH1w5_OOtGD3PFpNMHpv61JWu3ezrrrGXtCGkJErSQMfh_64zky1G9w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1018689257</pqid></control><display><type>article</type><title>InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Griffith, Z ; Dahlstrom, M ; Rodwell, M.J.W ; Fang, X.-M ; Lubyshev, D ; Wu, Y ; Fastenau, J.M ; Liu, W.K</creator><creatorcontrib>Griffith, Z ; Dahlstrom, M ; Rodwell, M.J.W ; Fang, X.-M ; Lubyshev, D ; Wu, Y ; Fastenau, J.M ; Liu, W.K</creatorcontrib><description>InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2004.840715(410)26</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><ispartof>IEEE electron device letters, 2005-01, Vol.26 (1), p.11</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Griffith, Z</creatorcontrib><creatorcontrib>Dahlstrom, M</creatorcontrib><creatorcontrib>Rodwell, M.J.W</creatorcontrib><creatorcontrib>Fang, X.-M</creatorcontrib><creatorcontrib>Lubyshev, D</creatorcontrib><creatorcontrib>Wu, Y</creatorcontrib><creatorcontrib>Fastenau, J.M</creatorcontrib><creatorcontrib>Liu, W.K</creatorcontrib><title>InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax</title><title>IEEE electron device letters</title><description>InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure.</description><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqNistOwkAUQCdEEqvwC-YmbHQx9d52po-lPKRNXLhgB4RcbQtDcAqdVo1fD4l-gKuTnHOEuCP0iTB9fJlN_QBR-YnCmPS9InwIop7wSOtEoo7CK-FhrEiGhNG1uHFuj0hKxcoTq9zO-cnJ3L7CNBsvHFR1A8a-NyW7soDCbE3LB8gn8Ma2-DJFu4Mdfxq7BYYwJTnPfqBattyt4TKARv2rPvh7IPoVH1w5_OOtGD3PFpNMHpv61JWu3ezrrrGXtCGkJErSQMfh_64zky1G9w</recordid><startdate>20050101</startdate><enddate>20050101</enddate><creator>Griffith, Z</creator><creator>Dahlstrom, M</creator><creator>Rodwell, M.J.W</creator><creator>Fang, X.-M</creator><creator>Lubyshev, D</creator><creator>Wu, Y</creator><creator>Fastenau, J.M</creator><creator>Liu, W.K</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20050101</creationdate><title>InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax</title><author>Griffith, Z ; Dahlstrom, M ; Rodwell, M.J.W ; Fang, X.-M ; Lubyshev, D ; Wu, Y ; Fastenau, J.M ; Liu, W.K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_10186892573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Griffith, Z</creatorcontrib><creatorcontrib>Dahlstrom, M</creatorcontrib><creatorcontrib>Rodwell, M.J.W</creatorcontrib><creatorcontrib>Fang, X.-M</creatorcontrib><creatorcontrib>Lubyshev, D</creatorcontrib><creatorcontrib>Wu, Y</creatorcontrib><creatorcontrib>Fastenau, J.M</creatorcontrib><creatorcontrib>Liu, W.K</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Griffith, Z</au><au>Dahlstrom, M</au><au>Rodwell, M.J.W</au><au>Fang, X.-M</au><au>Lubyshev, D</au><au>Wu, Y</au><au>Fastenau, J.M</au><au>Liu, W.K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax</atitle><jtitle>IEEE electron device letters</jtitle><date>2005-01-01</date><risdate>2005</risdate><volume>26</volume><issue>1</issue><spage>11</spage><pages>11-</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><abstract>InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure.</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/LED.2004.840715(410)26</doi></addata></record>
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title InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T14%3A33%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InGaAs-InP%20DHBTs%20for%20increased%20digital%20IC%20bandwidth%20having%20a%20391-GHz%20f%5Btau%5D%20and%20505-GHz%20fmax&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Griffith,%20Z&rft.date=2005-01-01&rft.volume=26&rft.issue=1&rft.spage=11&rft.pages=11-&rft.issn=0741-3106&rft.eissn=1558-0563&rft_id=info:doi/10.1109/LED.2004.840715(410)26&rft_dat=%3Cproquest%3E2679266471%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_journals_10186892573%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1018689257&rft_id=info:pmid/&rfr_iscdi=true