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Jungseok Chae and co-authors used a scanning gate microscope to monitor the variation of current induced by a gate voltage applied locally on the surface of a graphene transistor. A considerable enhancement is evident when either holes or electrons are there.

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Bibliographic Details
Published in:Nature materials 2012-05, Vol.11 (5), p.358-358
Main Author: Pulizzi, Fabio
Format: Article
Language:English
Subjects:
639/301/357/918/1052
Biomaterials
Chemistry and Materials Science
Condensed Matter Physics
Electric currents
Materials Science
Nanotechnology
Optical and Electronic Materials
research-highlights
Transistors
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Description
Summary:Jungseok Chae and co-authors used a scanning gate microscope to monitor the variation of current induced by a gate voltage applied locally on the surface of a graphene transistor. A considerable enhancement is evident when either holes or electrons are there.
ISSN:1476-1122
1476-4660
DOI:10.1038/nmat3323