Modeling, Simulation, and Validation of a Power SiC BJT

This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATL...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2012-10, Vol.27 (10), p.4338-4346
Main Authors: Gachovska, T., Hudgins, J. L., Bryant, A., Santi, E., Mantooth, H. A., Agarwal, A. K.
Format: Article
Language:English
Subjects:
Applied sciences
Charge carrier processes
Doping
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Equations
Exact sciences and technology
Fourier analysis
Integrated circuit modeling
Junctions
Mathematical model
Power electronics, power supplies
power semiconductor modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Silicon carbide (SiC) bipolar junction transistor (BJT)
Switching
Transistors
Waveform analysis
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Description
Summary:This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATLAB and Simulink. The experimental results of static operation and also the simulated and experimental results of switching waveforms are given.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2012.2190622