Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs

A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injection is developed. The model retains the simplicity of a 1-D solution to the ambipolar diffusion equation, but at the same time, captures the MOS-side carrier injection and its effects on steady-state c...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on industry applications 2010-03, Vol.46 (2), p.875-883
Main Authors: Liqing Lu, Zhiyang Chen, Bryant, A., Hudgins, J.L., Palmer, P.R., Santi, E.
Format: Article
Language:English
Subjects:
Ambipolar diffusion
Carrier injection
Carriers
Charge carrier density
Compact power semiconductor device models
Drift
Equations
Fourier series
Geometry
Insulated gate bipolar transistors
insulated gate transistor switches
Insulation
Mathematical analysis
Mathematical models
Power electronics
Power semiconductor devices
Power semiconductor switches
semiconductor device modeling
Switching
Switching loss
Waveforms
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injection is developed. The model retains the simplicity of a 1-D solution to the ambipolar diffusion equation, but at the same time, captures the MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms.
ISSN:0093-9994
1939-9367
DOI:10.1109/TIA.2009.2039770