Compact Models for Memristors Based on Charge-Flux Constitutive Relationships

This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to fin...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 2010-04, Vol.29 (4), p.590-598
Main Authors: Shin, Sangho, Kim, Kyungmin, Kang, Sung-Mo
Format: Article
Language:English
Subjects:
Boundaries
Circuit simulation
Circuits
Computer aided design
Constitutive relationship
Constitutive relationships
Design engineering
Equations
Flux
Frequency dependence
Hardware design languages
Hysteresis
macromodel
Mathematical models
memductor
memristor
Memristors
Nonvolatile memory
Semiconductor process modeling
Simulators
spectre
SPICE
verilog-A
Voltage
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Summary:This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to find their constitutive relationships is discussed, and examples of compact models are shown for both current-controlled and voltage-controlled memristors. Our models satisfy all of the memristor properties such as frequency dependent hysteresis behaviors and also unique boundary assurance to simulate memristors whether they behave memristively or resistively. Our models are implementable in circuit simulators, including SPICE, Verilog-A, and Spectre.
ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2010.2042891