Internal Bias Field in Ferroelectric Polymer Thin Film for Nonvolatile Memory Applications

Coercive voltages ( V C , the voltage which makes remanent polarization zero in ferroelectrics) of metal-ferroelectric polymer-metal capacitors were measured with different pulse periods. From the measured V C , coercive fields ( E C , normalized V C for thickness) and internal bias fields ( E BIAS...

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Bibliographic Details
Published in:IEEE electron device letters 2010-05, Vol.31 (5), p.482-484
Main Authors: Kim, Woo Young, Ka, Du Youn, Kim, Dong Soo, Kwon, Il Woong, Kim, Sang Youl, Lee, Yong Soo, Lee, Hee Chul
Format: Article
Language:English
Subjects:
Bias
Capacitors
Chemical technology
Coercive force
Data storage
Electric potential
Electrodes
Ferroelectric
Ferroelectric films
Ferroelectric materials
Ferroelectricity
Gold
interface asymmetry
internal bias field
Nonvolatile memory
Polarization
Polymer films
pulse period
retention
Thin films
Voltage
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Description
Summary:Coercive voltages ( V C , the voltage which makes remanent polarization zero in ferroelectrics) of metal-ferroelectric polymer-metal capacitors were measured with different pulse periods. From the measured V C , coercive fields ( E C , normalized V C for thickness) and internal bias fields ( E BIAS ) were calculated. Although E C was found to be nearly constant with thickness, E BIAS increased as thickness decreased. Based on these findings, it appears that E BIAS can be induced from interface phenomenon and greatly affects retention performance in thin ferroelectric films used for nonvolatile memory devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2042676