Study of P/E Cycling Endurance Induced Degradation in SANOS Memories Under NAND (FN/FN) Operation

Program/Erase (P/E) cycling endurance in poly-Si/Al 2 O 3 /SiN/SiO 2 /Si (SANOS) memories is systematically studied. Cycling-induced trap generation, memory window (MW) closure, and eventual stack breakdown are shown to be strongly influenced by the material composition of the silicon nitride (SiN)...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-07, Vol.57 (7), p.1548-1558
Main Authors: Sandhya, C, Oak, Apoorva B, Chattar, Nihit, Ganguly, Udayan, Olsen, C, Seutter, S M, Date, L, Hung, R, Vasi, Juzer, Mahapatra, Souvik
Format: Article
Language:English
Subjects:
Aluminum oxide
Breakdown
Charge trap flash (CTF)
Cycles
Degradation
Durability
Electric breakdown
Electron traps
Endurance
erase
impact ionization
Logic gates
memory window
program
retention
SANOS
Silicon
Silicon compounds
silicon nitride (SiN)
SONOS
Stacks
Sustaining
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Summary:Program/Erase (P/E) cycling endurance in poly-Si/Al 2 O 3 /SiN/SiO 2 /Si (SANOS) memories is systematically studied. Cycling-induced trap generation, memory window (MW) closure, and eventual stack breakdown are shown to be strongly influenced by the material composition of the silicon nitride (SiN) charge trap layer. P/E pulsewidth and amplitude, as well as starting program and erase flatband voltage (V FB ) levels (therefore the overall MW), are shown to uniquely impact stack degradation and breakdown. An electron-flux-driven anode hole generation model is proposed, and trap generation in both SiN and tunnel oxide are used to explain stack degradation and breakdown. This paper emphasizes the importance of SiN layer optimization for reliably sustaining large MW during P/E operation of SANOS memories.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2048404