GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

GaN-based high electron mobility transistors (HEMTs) with a nearly strain-free high-Al-content quaternary barrier and electron mobilities up to 1590 cm 2 /Vs have been grown on 4H-SiC using molecular beam epitaxy (MBE). The processed devices with 150-nm gate length exhibit a high dc performance with...

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Bibliographic Details
Published in:IEEE electron device letters 2010-07, Vol.31 (7), p.671-673
Main Authors: Lim, T, Aidam, R, Waltereit, P, Henkel, T, Quay, R, Lozar, R, Maier, T, Kirste, L, Ambacher, O
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Barriers
Density
Devices
Electron mobility
Gallium nitride
Gallium nitrides
HEMTs
HFET
high electron mobility transistor (HEMT)
High electron mobility transistors
InAlGaN
lattice-matched
Microwave transistors
MODFETs
Molecular beam epitaxial growth
Molecular beam epitaxy
molecular beam epitaxy (MBE)
Plasma measurements
quaternary
Radio frequency
Semiconductor devices
Sheet materials
transistor
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Summary:GaN-based high electron mobility transistors (HEMTs) with a nearly strain-free high-Al-content quaternary barrier and electron mobilities up to 1590 cm 2 /Vs have been grown on 4H-SiC using molecular beam epitaxy (MBE). The processed devices with 150-nm gate length exhibit a high dc performance with a maximum current density of 2.3 A/mm and an extrinsic transconductance up to 675 mS/mm that is among the highest values reported until now for any III-N transistor. We further present, to our knowledge, the first power measurements at 10 GHz of MBE-grown GaN HEMTs with nearly lattice-matched InAlGaN barrier achieving 47% power-added efficiency at 10 V and an output power density of 5.6 W/mm at 30-V bias.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2048996