Particular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaO Oxidation

This investigation describes the unique failure mechanism of the Wheatstone bridge circuit-type alternating current light-emitting diode (WB AC-LED). The micro-LEDs in WB AC-LED rectifying branches were reverse biased, and therefore, positive charges (holes) accumulated in the n-type GaN layer under...

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Bibliographic Details
Published in:IEEE photonics technology letters 2010-08, Vol.22 (15), p.1168-1170
Main Authors: Yen, Hsi-Hsuan, Kuo, Hao-Chung, Yeh, Wen-Yung
Format: Article
Language:English
Subjects:
Bridge circuits
Failure analysis
gallium compounds
Gallium nitride
LED lamps
Light emitting diodes
light-emitting diodes (LEDs)
Oxidation
Quantum well devices
Rough surfaces
Surface roughness
Voltage
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Summary:This investigation describes the unique failure mechanism of the Wheatstone bridge circuit-type alternating current light-emitting diode (WB AC-LED). The micro-LEDs in WB AC-LED rectifying branches were reverse biased, and therefore, positive charges (holes) accumulated in the n-type GaN layer under the active region and combined with the GaN material and OH - ions to generate GaO x oxidation grains. The GaO x generation speed was fast with high reverse voltage applied to micro-LEDs, and the expansion of GaO x dimensions degraded the opto-electrical characteristics and eventually caused failure of the WB AC-LED. The root-mean-square reverse voltage dropped across each micro-LED from -13.1 to -6.7 V with different micro-LEDs array arrangements extended the WB AC-LED lifetime from being less than 650 h to more than 1600 h, respectively.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2010.2051424