Room-Temperature Operation of Discrete-Mode InGaAs-AlAsSb Quantum-Cascade Laser With Emission at [Formula Omitted]m

Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-[Formula Omitted]m-wide ridge waveguide and 3000-[Formula Omitted]m-long cavity, the laser had a threshold current density [Formula Omitted] of 4.2 [Formula Omitted] [Formula Omitte...

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Bibliographic Details
Published in:IEEE photonics technology letters 2010-09, Vol.22 (17), p.1273
Main Authors: Phelan, Richard, Slight, Thomas James, Kelly, Brian, O'Carroll, John, McKee, Andrew, Revin, Dmitry G, Zhang, Shiyong Y, Krysa, Andrey B, Kennedy, Kenneth L, Cockburn, John W, Ironside, Charlie N, Meredith, Wyn, O'Gorman, James
Format: Article
Language:English
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Summary:Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-[Formula Omitted]m-wide ridge waveguide and 3000-[Formula Omitted]m-long cavity, the laser had a threshold current density [Formula Omitted] of 4.2 [Formula Omitted] [Formula Omitted] at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 [Formula Omitted]m with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of [Formula Omitted].
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2010.2053529