Room-Temperature Operation of Discrete-Mode InGaAs-AlAsSb Quantum-Cascade Laser With Emission at [Formula Omitted]m

Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-[Formula Omitted]m-wide ridge waveguide and 3000-[Formula Omitted]m-long cavity, the laser had a threshold current density [Formula Omitted] of 4.2 [Formula Omitted] [Formula Omitte...

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Published in:IEEE photonics technology letters 2010-09, Vol.22 (17), p.1273
Main Authors: Phelan, Richard, Slight, Thomas James, Kelly, Brian, O'Carroll, John, McKee, Andrew, Revin, Dmitry G, Zhang, Shiyong Y, Krysa, Andrey B, Kennedy, Kenneth L, Cockburn, John W, Ironside, Charlie N, Meredith, Wyn, O'Gorman, James
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container_issue 17
container_start_page 1273
container_title IEEE photonics technology letters
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creator Phelan, Richard
Slight, Thomas James
Kelly, Brian
O'Carroll, John
McKee, Andrew
Revin, Dmitry G
Zhang, Shiyong Y
Krysa, Andrey B
Kennedy, Kenneth L
Cockburn, John W
Ironside, Charlie N
Meredith, Wyn
O'Gorman, James
description Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-[Formula Omitted]m-wide ridge waveguide and 3000-[Formula Omitted]m-long cavity, the laser had a threshold current density [Formula Omitted] of 4.2 [Formula Omitted] [Formula Omitted] at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 [Formula Omitted]m with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of [Formula Omitted].
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_1027780814</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2720482321</sourcerecordid><originalsourceid>FETCH-proquest_journals_10277808143</originalsourceid><addsrcrecordid>eNqNjEtLAzEUhYMoWB97lwHXqffOZJjOcqitFSr1MeBCpMT2FlMmk5qb_H-j-ANcne_wHY4QVwhjRGhulo_duIDcCqjKqmiOxAgbjQqw1seZITNiWZ2KM-Y9AOqq1CPBz9471ZE7UDAxBZKrX7J-kH4nby1vAkVSD35L8n64My2rtm_55UM-JTPE5NTU8MZkuzRMQb7a-ClnzjL_XJgo3-Y-uNQbuXI2Rtq-uwtxsjM90-Vfnovr-aybLtQh-K9EHNd7n8KQ1RqhqOsJTFCX_1t9A5PlUT8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1027780814</pqid></control><display><type>article</type><title>Room-Temperature Operation of Discrete-Mode InGaAs-AlAsSb Quantum-Cascade Laser With Emission at [Formula Omitted]m</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Phelan, Richard ; Slight, Thomas James ; Kelly, Brian ; O'Carroll, John ; McKee, Andrew ; Revin, Dmitry G ; Zhang, Shiyong Y ; Krysa, Andrey B ; Kennedy, Kenneth L ; Cockburn, John W ; Ironside, Charlie N ; Meredith, Wyn ; O'Gorman, James</creator><creatorcontrib>Phelan, Richard ; Slight, Thomas James ; Kelly, Brian ; O'Carroll, John ; McKee, Andrew ; Revin, Dmitry G ; Zhang, Shiyong Y ; Krysa, Andrey B ; Kennedy, Kenneth L ; Cockburn, John W ; Ironside, Charlie N ; Meredith, Wyn ; O'Gorman, James</creatorcontrib><description>Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-[Formula Omitted]m-wide ridge waveguide and 3000-[Formula Omitted]m-long cavity, the laser had a threshold current density [Formula Omitted] of 4.2 [Formula Omitted] [Formula Omitted] at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 [Formula Omitted]m with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of [Formula Omitted].</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2010.2053529</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><ispartof>IEEE photonics technology letters, 2010-09, Vol.22 (17), p.1273</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2010</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Phelan, Richard</creatorcontrib><creatorcontrib>Slight, Thomas James</creatorcontrib><creatorcontrib>Kelly, Brian</creatorcontrib><creatorcontrib>O'Carroll, John</creatorcontrib><creatorcontrib>McKee, Andrew</creatorcontrib><creatorcontrib>Revin, Dmitry G</creatorcontrib><creatorcontrib>Zhang, Shiyong Y</creatorcontrib><creatorcontrib>Krysa, Andrey B</creatorcontrib><creatorcontrib>Kennedy, Kenneth L</creatorcontrib><creatorcontrib>Cockburn, John W</creatorcontrib><creatorcontrib>Ironside, Charlie N</creatorcontrib><creatorcontrib>Meredith, Wyn</creatorcontrib><creatorcontrib>O'Gorman, James</creatorcontrib><title>Room-Temperature Operation of Discrete-Mode InGaAs-AlAsSb Quantum-Cascade Laser With Emission at [Formula Omitted]m</title><title>IEEE photonics technology letters</title><description>Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-[Formula Omitted]m-wide ridge waveguide and 3000-[Formula Omitted]m-long cavity, the laser had a threshold current density [Formula Omitted] of 4.2 [Formula Omitted] [Formula Omitted] at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 [Formula Omitted]m with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of [Formula Omitted].</description><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqNjEtLAzEUhYMoWB97lwHXqffOZJjOcqitFSr1MeBCpMT2FlMmk5qb_H-j-ANcne_wHY4QVwhjRGhulo_duIDcCqjKqmiOxAgbjQqw1seZITNiWZ2KM-Y9AOqq1CPBz9471ZE7UDAxBZKrX7J-kH4nby1vAkVSD35L8n64My2rtm_55UM-JTPE5NTU8MZkuzRMQb7a-ClnzjL_XJgo3-Y-uNQbuXI2Rtq-uwtxsjM90-Vfnovr-aybLtQh-K9EHNd7n8KQ1RqhqOsJTFCX_1t9A5PlUT8</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Phelan, Richard</creator><creator>Slight, Thomas James</creator><creator>Kelly, Brian</creator><creator>O'Carroll, John</creator><creator>McKee, Andrew</creator><creator>Revin, Dmitry G</creator><creator>Zhang, Shiyong Y</creator><creator>Krysa, Andrey B</creator><creator>Kennedy, Kenneth L</creator><creator>Cockburn, John W</creator><creator>Ironside, Charlie N</creator><creator>Meredith, Wyn</creator><creator>O'Gorman, James</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20100901</creationdate><title>Room-Temperature Operation of Discrete-Mode InGaAs-AlAsSb Quantum-Cascade Laser With Emission at [Formula Omitted]m</title><author>Phelan, Richard ; Slight, Thomas James ; Kelly, Brian ; O'Carroll, John ; McKee, Andrew ; Revin, Dmitry G ; Zhang, Shiyong Y ; Krysa, Andrey B ; Kennedy, Kenneth L ; Cockburn, John W ; Ironside, Charlie N ; Meredith, Wyn ; O'Gorman, James</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_10277808143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Phelan, Richard</creatorcontrib><creatorcontrib>Slight, Thomas James</creatorcontrib><creatorcontrib>Kelly, Brian</creatorcontrib><creatorcontrib>O'Carroll, John</creatorcontrib><creatorcontrib>McKee, Andrew</creatorcontrib><creatorcontrib>Revin, Dmitry G</creatorcontrib><creatorcontrib>Zhang, Shiyong Y</creatorcontrib><creatorcontrib>Krysa, Andrey B</creatorcontrib><creatorcontrib>Kennedy, Kenneth L</creatorcontrib><creatorcontrib>Cockburn, John W</creatorcontrib><creatorcontrib>Ironside, Charlie N</creatorcontrib><creatorcontrib>Meredith, Wyn</creatorcontrib><creatorcontrib>O'Gorman, James</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Phelan, Richard</au><au>Slight, Thomas James</au><au>Kelly, Brian</au><au>O'Carroll, John</au><au>McKee, Andrew</au><au>Revin, Dmitry G</au><au>Zhang, Shiyong Y</au><au>Krysa, Andrey B</au><au>Kennedy, Kenneth L</au><au>Cockburn, John W</au><au>Ironside, Charlie N</au><au>Meredith, Wyn</au><au>O'Gorman, James</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room-Temperature Operation of Discrete-Mode InGaAs-AlAsSb Quantum-Cascade Laser With Emission at [Formula Omitted]m</atitle><jtitle>IEEE photonics technology letters</jtitle><date>2010-09-01</date><risdate>2010</risdate><volume>22</volume><issue>17</issue><spage>1273</spage><pages>1273-</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><abstract>Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-[Formula Omitted]m-wide ridge waveguide and 3000-[Formula Omitted]m-long cavity, the laser had a threshold current density [Formula Omitted] of 4.2 [Formula Omitted] [Formula Omitted] at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 [Formula Omitted]m with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of [Formula Omitted].</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/LPT.2010.2053529</doi></addata></record>
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title Room-Temperature Operation of Discrete-Mode InGaAs-AlAsSb Quantum-Cascade Laser With Emission at [Formula Omitted]m
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T12%3A36%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room-Temperature%20Operation%20of%20Discrete-Mode%20InGaAs-AlAsSb%20Quantum-Cascade%20Laser%20With%20Emission%20at%20%5BFormula%20Omitted%5Dm&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Phelan,%20Richard&rft.date=2010-09-01&rft.volume=22&rft.issue=17&rft.spage=1273&rft.pages=1273-&rft.issn=1041-1135&rft.eissn=1941-0174&rft_id=info:doi/10.1109/LPT.2010.2053529&rft_dat=%3Cproquest%3E2720482321%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_journals_10277808143%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1027780814&rft_id=info:pmid/&rfr_iscdi=true