MOCVD [Formula Omitted] for PCM Applications

Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2[Formula Omitted] reduction of reset current and set resistance were demonstrated compared with equivalent devi...

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Bibliographic Details
Published in:IEEE electron device letters 2010-09, Vol.31 (9), p.999
Main Authors: Zheng, J. F, Reed, J, Schell, C, Czubatyj, W, Sandoval, R, Fournier, J, Li, W, Hunks, W, Dennison, C, Hudgens, S, Lowrey, T
Format: Article
Language:English
Online Access:Get full text
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Summary:Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2[Formula Omitted] reduction of reset current and set resistance were demonstrated compared with equivalent devices using PVD-deposited GST225. The devices show set speeds of 175-260 ns and a ten-year data-retention temperature of 102 [Formula Omitted], comparable with devices made using a PVD GST225 alloy. Cycle endurance of up to [Formula Omitted] was also demonstrated.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2052233