205-GHz (Al,In)N/GaN HEMTs

We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V GS = 0 V and show a measured transcon...

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Bibliographic Details
Published in:IEEE electron device letters 2010-09, Vol.31 (9), p.957-959
Main Authors: Haifeng Sun, Alt, A R, Benedickter, H, Feltin, E, Carlin, J.-F, Gonschorek, M, Grandjean, N R, Bolognesi, C R
Format: Article
Language:English
Subjects:
AlInN/GaN
Aluminum gallium nitride
Applied sciences
Channels
Current density
Current measurement
Cutoff frequency
Density measurement
Devices
Electronics
Exact sciences and technology
Gain
Gallium nitride
Gallium nitrides
Gates
HEMTs
High electron mobility transistors
high-electron-mobility transistor (HEMT)
Microwave and submillimeter wave devices, electron transfer devices
millimeter-wave transistors
MODFETs
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
State of the art
Temperature
Transconductance
Transistors
Transport
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Summary:We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V GS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2055826