[Formula Omitted] Ferroelectric Thin-Film Capacitors for Flexible Nonvolatile Memory Applications

This letter reports the fabrication of [Formula Omitted] (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a sol-gel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-sa...

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Bibliographic Details
Published in:IEEE electron device letters 2010-09, Vol.31 (9), p.1017
Main Authors: Rho, Jonghyun, Kim, Sang Jin, Heo, Wook, Lee, Nae-Eung, Lee, Hwan-Soo, Ahn, Jong-Hyun
Format: Article
Language:English
Online Access:Get full text
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Summary:This letter reports the fabrication of [Formula Omitted] (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a sol-gel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a [Formula Omitted] of [Formula Omitted] and a [Formula Omitted] of [Formula Omitted]1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2053344