Optimized Microcavity and Photonic Crystal Parameters of GaN-Based Ultrathin-Film Light-Emitting Diodes for Highly Directional Beam Profiles

This study experimentally investigates the highly directional far-field emission distributions of GaN ultrathin-film light-emitting diodes (uTFLEDs) with optimized microcavity thickness and photonic crystal (PhC) parameters. Results show that directionality depends on guided mode extraction behavior...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 2010-11, Vol.22 (21), p.1547-1549
Main Authors: Lai, Chun-Feng, Chao, Chia-Hsin, Yeh, Wen-Yung
Format: Article
Language:English
Subjects:
Beams (radiation)
Chaos
Conferences
Electroluminescence
Extraction
Fiber optics
Gallium nitride
Gallium nitrides
GaN
Lattices
Light emitting diodes
light-emitting diodes (LEDs)
Microcavities
microcavity
Optical fibers
Photonic crystals
photonic crystals (PhCs)
Power generation
Scanning electron microscopy
Substrates
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study experimentally investigates the highly directional far-field emission distributions of GaN ultrathin-film light-emitting diodes (uTFLEDs) with optimized microcavity thickness and photonic crystal (PhC) parameters. Results show that directionality depends on guided mode extraction behaviors and strong microcavity effects. The proposed GaN PhC uTFLED exhibited an output power extraction efficiency enhancement of 278% ( 3.78) compared to GaN non-PhC uTFLED, and produced a directional far-field emission pattern at half intensity near ±17°.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2010.2066965