Probing Buried Defects in Extreme Ultraviolet Multilayer Blanks Using Ultrasound Holography

Imaging high-resolution subsurface defects nondestructively in Mo-Si multilayer (ML) blanks used in extreme ultraviolet lithography is a challenge and no known metrology tools are available to identify such defects in a nondestructive way. The understanding of their growth mechanism during ML deposi...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nanotechnology 2010-11, Vol.9 (6), p.671-674
Main Authors: Shekhawat, Gajendra S, Avasthy, Shraddha, Srivastava, Arvind K, Soo-Hyun Tark, Dravid, Vinayak P
Format: Article
Language:English
Subjects:
Applied sciences
Defect detection
Electronics
Exact sciences and technology
High-resolution imaging
Holography
Image resolution
Lithography
Metrology
Microelectronic fabrication (materials and surfaces technology)
Monitoring
near field
Nonhomogeneous media
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Testing, measurement, noise and reliability
Ultrasonic imaging
ultrasonics
Ultraviolet sources
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Imaging high-resolution subsurface defects nondestructively in Mo-Si multilayer (ML) blanks used in extreme ultraviolet lithography is a challenge and no known metrology tools are available to identify such defects in a nondestructive way. The understanding of their growth mechanism during ML deposition necessitates the monitoring of these defects, which can then lead to fabricating defect-free ML blanks. Here, we report for the first time, a unique and novel application of scanning near-field ultrasound holography (SNFUH) in nondestructive imaging of high-resolution e-beam patterned lines and bumps buried under Mo/Si ML film stacks used for ultraviolet lithography. Our results indicate the successful identification of buried defects under ML blanks using SNFUH.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2010.2053556