Electroluminescence Studies of Modulation p-Doped Quantum Dot Laser Structures

Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this red...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2010-12, Vol.46 (12), p.1847-1853
Main Authors: Hasbullah, N F, Hopkinson, M, Alexander, R R, Hogg, R A, David, J P R, Badcock, T J, Mowbray, D J
Format: Article
Language:English
Subjects:
Doping
Electroluminescence
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Gallium arsenides
Injection current
Lasers
Modulation
Optics
p-doping
Physics
quantum dot
Quantum dot lasers
Quantum dots
Reduction
semiconductor
Semiconductor lasers
laser diodes
Temperature dependence
Temperature measurement
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Summary:Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this reduction decreasing with increasing doping level. An increase in the activation energy controlling the EL quenching is found with increasing p-doping. This is attributed to an increased coulombic attraction between the extrinsic holes and injected electrons. At room temperature and low injection current, a superlinear dependence of the IEL on the injection current is observed. This superlinearity decreases as the p-doping increases and this behavior indicates a reduction in the amount of nonradiative recombination. This reduction is believed to be caused by the saturation of nonradiative centers and/or reduced escape of electrons to the GaAs barrier due to the increased confinement potential.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2010.2049828