18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation

Enhancement-mode (E-mode) AlGaN/GaN heterojunction field effect transistors (HFETs) with a nominal gate length of 0.35 μm are fabricated on a SiC substrate by fluorine plasma ion implantation without the use of gate recess. The threshold voltage is measured to be +0.2 V by linear extrapolation from...

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Bibliographic Details
Published in:IEEE electron device letters 2010-12, Vol.31 (12), p.1386-1388
Main Authors: Feng, Z H, Zhou, R, Xie, S Y, Yin, J Y, Fang, J X, Liu, B, Zhou, W, Chen, K J, Cai, S J
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Aluminum gallium nitrides
Current density
Cutoff frequency
Density
Devices
enhancement-mode (E-mode)
Fluorine
fluorine plasma ion implantation
Gallium nitride
Gallium nitrides
Gates
HEMTs
Ion implantation
Ku-band
Logic gates
MODFETs
Plasmas
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Summary:Enhancement-mode (E-mode) AlGaN/GaN heterojunction field effect transistors (HFETs) with a nominal gate length of 0.35 μm are fabricated on a SiC substrate by fluorine plasma ion implantation without the use of gate recess. The threshold voltage is measured to be +0.2 V by linear extrapolation from the transfer characteristics. The E-mode device exhibits a saturation drain current density of 735 mA/mm at a gate bias of 4 V, a peak transconductance of 269 mS/mm, a current-gain cutoff frequency ( fT ) of 39 GHz, and a maximum oscillation frequency ( f max ) of 91 GHz. At 18 GHz, the fabricated E-mode device exhibits a maximum output power density of 3.65 W/mm, a linear gain of 11.6 dB, and a peak power-added efficiency of 42%. This is the first report of the large-signal performance of AlGaN/GaN E-mode HFETs in the Ku-band.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2072901