Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays

The p-GaN/In 0.06 Ga 0.94 N/n-GaN double heterojunctional solar cells with solely formed nanorod arrays of p-GaN have been fabricated on sapphire (0001). The p-GaN nanorod arrays are demonstrated to significantly reduce the reflectance loss of light incidence. A stress relief of the intrinsic InGaN...

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Bibliographic Details
Published in:IEEE electron device letters 2010-12, Vol.31 (12), p.1422-1424
Main Authors: ZHANG, Dong-Yan, ZHENG, Xin-He, TANG, Long-Juan, DONG, Jian-Rong, HUI WANG, HUI YANG
Format: Article
Language:English
Subjects:
Applied sciences
Arrays
Coatings
Compound structure devices
Devices
Electronics
Energy
Etching
Exact sciences and technology
External quantum efficiency (EQE)
Gallium nitride
Gallium nitrides
Indium gallium nitrides
Materials
Nanocomposites
Nanomaterials
nanorod arrays
Nanostructure
Nanostructured materials
Natural energy
Optoelectronic devices
photovoltaic (PV)
Photovoltaic cells
Photovoltaic conversion
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:The p-GaN/In 0.06 Ga 0.94 N/n-GaN double heterojunctional solar cells with solely formed nanorod arrays of p-GaN have been fabricated on sapphire (0001). The p-GaN nanorod arrays are demonstrated to significantly reduce the reflectance loss of light incidence. A stress relief of the intrinsic InGaN region is observed from high-resolution X-ray diffraction analyses. The electroluminescence emission peak is blue shifted compared with the conventional solar cells. These results are reflected by the spectral dependences of the external quantum efficiency (EQE) that show a shorter cutoff wavelength response. The maximum EQE value is 55.5%, which is an enhancement of 10% as compared with the conventional devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2074176