An Adaptive Grid Scheme for Single-Event Upset Device Simulations

An adaptive grid scheme for single-event upset device simulations is presented. Single-event transient simulations for a reverse-biased N + /P diode and nMOSFET were performed using the adaptive grid scheme, a customized grid scheme and a uniform grid scheme. Results show that adaptive gridding can...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3239-3244
Main Authors: Cummings, D J, Park, H, Thompson, S E, Law, M E
Format: Article
Language:English
Subjects:
Adaptive control systems
Adaptive grid
Adaptive systems
charge collection
device simulation
Devices
Diodes
MOSFETs
Preserving
Simulation
Single event upset
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Summary:An adaptive grid scheme for single-event upset device simulations is presented. Single-event transient simulations for a reverse-biased N + /P diode and nMOSFET were performed using the adaptive grid scheme, a customized grid scheme and a uniform grid scheme. Results show that adaptive gridding can offer significant simulation time savings while preserving accuracy.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2080688