High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy

A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-10, Vol.59 (10), p.2707-2714
Main Authors: Sakic, A., van Veen, G., Kooijman, K., Vogelsang, P., Scholtes, T. L. M., de Boer, W. B., Derakhshandeh, J., Wien, W. H. A., Milosavljevic, S., Nanver, L. K.
Format: Article
Language:English
Subjects:
Applied sciences
Backscattered electrons (BSEs)
Boron
boron layer
Capacitance
Current measurement
Detectors
Diodes
electron detector
Electron energy
Electronics
Exact sciences and technology
General equipment and techniques
Imaging
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
low-energy electrons
Optoelectronic devices
Photodiode detectors
Photodiodes
Physics
Scanning electron microscopy
Scanning probe microscopes, components and techniques
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
Silicon
silicon epitaxy
silicon photodiode
Surface treatment
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Summary:A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging using backscattered electrons is demonstrated for 50-eV electron landing energy values. The detector is built up of several closely packed photodiodes, and to obtain high scanning speed, each photodiode is engineered with low series resistance and low capacitance values. The low capacitance (
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2207960