Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-[Formula Omitted] Dielectrics

This paper presents a capacitance model and mobility extraction method through the use of tapered transmission line theory for accumulation-mode MOSCAP test structures. The analytical model accounts for the discrepancies commonly found when measuring the capacitance of nontraditional MOSCAP architec...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-10, Vol.59 (10), p.2662
Main Authors: Bothe, Kyle M, von Hauff, Peter A, Afshar, Amir, oughi-Abari, Ali, Cadien, Kenneth C, Barlage, Douglas W
Format: Article
Language:English
Online Access:Get full text
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Summary:This paper presents a capacitance model and mobility extraction method through the use of tapered transmission line theory for accumulation-mode MOSCAP test structures. The analytical model accounts for the discrepancies commonly found when measuring the capacitance of nontraditional MOSCAP architectures. Through fabrication of a planar MOSCAP, this model accurately reproduced consistent capacitance density measurements for several device dimensions and high-[Formula Omitted] dielectric thicknesses. In this paper, the theoretical basis of the model extracts the effective electron mobility of the accumulation channel in the semiconductor without fabricating a transistor.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2209653