Low-voltage organic transistor with subfemtoliter inkjet source–drain contacts

We have successfully achieved a transconductance of 0.76 S/m for organic thin-film transistors with 4 V operation, which is the largest value reported for organic transistors fabricated using printing methods. Using a subfemtoliter inkjet, silver electrodes with a line width of 1 µm and a channel le...

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Bibliographic Details
Published in:MRS communications 2011-11, Vol.1 (1), p.3-6
Main Authors: Yokota, Tomoyuki, Sekitani, Tsuyoshi, Kato, Yu, Kuribara, Kazunori, Zschieschang, Ute, Klauk, Hagen, Yamamoto, Tatsuya, Takimiya, Kazuo, Kuwabara, Hirokazu, Ikeda, Masaaki, Someya, Takao
Format: Article
Language:English
Subjects:
Biomaterials
Characterization and Evaluation of Materials
Materials Engineering
Materials Science
Nanotechnology
Polymer Sciences
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Summary:We have successfully achieved a transconductance of 0.76 S/m for organic thin-film transistors with 4 V operation, which is the largest value reported for organic transistors fabricated using printing methods. Using a subfemtoliter inkjet, silver electrodes with a line width of 1 µm and a channel length of 1 µm were printed directly onto an air-stable, high-mobility organic semiconductor that was deposited on a single-molecule self-assembled monolayer-based gate dielectric. On reducing the droplet volume (0.5 fl) ejected from the inkjet nozzle, which reduces sintering temperatures down to 90 °C, the inkjet printing of silver electrodes was accomplished without damage to the organic semiconductor.
ISSN:2159-6859
2159-6867
DOI:10.1557/mrc.2011.4