Integrated BiCMOS Control Circuits for High-Performance DC-DC Boost Converter

This paper introduces the design of integrated BiCMOS current-sensing circuit and amplifier for high-performance current-mode dc-dc boost converter. By exploiting the advantage presented by the integration of both CMOS and bipolar devices within same technology, the BiCMOS circuits offers high-gain...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2013-05, Vol.28 (5), p.2596-2603
Main Authors: LEE, Chan-Soo, OH, Young-Jin, NA, Kee-Yeol, KIM, Yeong-Seuk, KIM, Nam-Soo
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
BiCMOS
BiCMOS integrated circuits
boost
Circuit properties
CMOS
current-mirro
current-sensing
Design. Technologies. Operation analysis. Testing
Electric currents
Electric, optical and optoelectronic circuits
Electrical engineering. Electrical power engineering
Electrical machines
Electronic circuits
Electronics
Exact sciences and technology
integrated
Integrated circuits
MOSFET circuits
Operational amplifiers
Receivers & amplifiers
Regulation and control
Resistance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors
Signal convertors
Threshold voltage
Transformers
Transistors
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Summary:This paper introduces the design of integrated BiCMOS current-sensing circuit and amplifier for high-performance current-mode dc-dc boost converter. By exploiting the advantage presented by the integration of both CMOS and bipolar devices within same technology, the BiCMOS circuits offers high-gain amplifier and accurately sensed inductor current. The error amplifier has BJT differential pair and current sources to obtain a fast response, while the current-sensing circuit exploits a current-mirror instead of opamplifier as a voltage follower. The test in 0.35-μm BiCMOS process shows that the transient time of the error amplifier is about 4 μs and the current-sensing circuit can operate with accuracy of 88% at the frequency of 20 kHz. The output voltage of 4.8-8 V is obtained at the input voltage of 3-5 V with the ripple ratio within 5%.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2012.2217156