A surface-ionization method of detection of a neutral component of indium sputtering under bombardment by cluster ions

A surface‐ionization method of measuring the total sputtering yield has been developed. The indium sputtering by Bim+ (m = 1–7) cluster ions with energy 2–10 keV has been studied. A non‐additive increase in the total sputtering yield with the raise in the number of atoms in cluster projectiles has b...

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Bibliographic Details
Published in:Surface and interface analysis 2013-01, Vol.45 (1), p.147-149
Main Authors: Morozov, S. N., Rasulev, U. Kh
Format: Article
Language:English
Subjects:
Atomic, molecular, and ion beam impact and interactions with surfaces
cluster
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Impact phenomena (including electron spectra and sputtering)
indium
ion emission
Physics
SIMS
sputtering
surface ionization
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Summary:A surface‐ionization method of measuring the total sputtering yield has been developed. The indium sputtering by Bim+ (m = 1–7) cluster ions with energy 2–10 keV has been studied. A non‐additive increase in the total sputtering yield with the raise in the number of atoms in cluster projectiles has been found. Copyright © 2012 John Wiley & Sons, Ltd.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.4911