Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H 2 O 2 ) oxidation technique which demonstrates the advantages of simplicity and cost effectiveness. A 13-nm-thic...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-01, Vol.60 (1), p.213-220
Main Authors: LIU, Han-Yin, CHOU, Bo-Yi, HSU, Wei-Chou, LEE, Ching-Sung, SHEU, Jinn-Kong, HO, Chiu-Sheng
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Aluminum gallium nitrides
Applied sciences
Devices
Electronics
Exact sciences and technology
Gallium nitride
Gallium nitrides
gate dielectric
Gates
hbox{H}_{2}\hbox{O}_{2} oxidation
HEMTs
High electron mobility transistors
Hydrogen peroxide
Leakage current
Logic gates
metal-oxide-semiconductor (MOS) high electron mobility transistor (HEMT) (MOS-HEMT)
Oxidation
Performance evaluation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
surface passivation
Transistors
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Summary:This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H 2 O 2 ) oxidation technique which demonstrates the advantages of simplicity and cost effectiveness. A 13-nm-thick Al 2 O 3 oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current collapse, which are the critical issues of nitride HEMTs. Enhanced device performances of dc, RF, power, and reliability of the present MOS-HEMT are comprehensively investigated as compared with a conventional Schottky-gate HEMT.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2227325