Effect of Accumulated Charge on the Total Ionizing Dose Response of a NAND Flash Memory

Consecutive write operations performed on a Samsung NAND flash memory are shown to significantly increase the total ionizing dose level at which data corruption occurs. Consequences of multiple consecutive write operations are discussed as well as the mechanisms at work. Elevated temperature exposur...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2012-12, Vol.59 (6), p.2945-2951
Main Authors: Kay, Matthew J., Gadlage, Matthew J., Duncan, Adam R., Ingalls, David, Howard, Andrew, Oldham, Timothy R.
Format: Article
Language:English
Subjects:
Annealing
Assurance
Blocking
Charge
Flash memories
Flash memory
Flash memory (computers)
Hardness
High temperature
Position (location)
Radiation effects
total dose effects
Transistors
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Summary:Consecutive write operations performed on a Samsung NAND flash memory are shown to significantly increase the total ionizing dose level at which data corruption occurs. Consequences of multiple consecutive write operations are discussed as well as the mechanisms at work. Elevated temperature exposure and page location within a block of the memory are shown to have significant effects on the amount of data corruption observed. The hardness assurance implications of these effects are discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2012.2220156