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Large Within-Die Gate Delay Variations in Sub-Threshold Logic Circuits at Low Temperature

Temperature dependence of 256 within-die random gate delay variations in sub-threshold logic circuits is measured in 40-nm CMOS test chips. When the temperature is reduced from 25 ° C to -40 ° C, the sigma/average (σ/μ) of the gate delay at 0.3 V increases by 1.4 times. A newly developed model shows...

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Published in:IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2012-12, Vol.59 (12), p.918-921
Main Authors: Takahashi, R., Takata, H., Yasufuku, T., Fuketa, H., Takamiya, M., Nomura, M., Shinohara, H., Sakurai, T.
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cited_by cdi_FETCH-LOGICAL-c394t-d71fa998923065d41664d1115606f97f327a21cafd9f146014d250a951ffd1143
cites cdi_FETCH-LOGICAL-c394t-d71fa998923065d41664d1115606f97f327a21cafd9f146014d250a951ffd1143
container_end_page 921
container_issue 12
container_start_page 918
container_title IEEE transactions on circuits and systems. II, Express briefs
container_volume 59
creator Takahashi, R.
Takata, H.
Yasufuku, T.
Fuketa, H.
Takamiya, M.
Nomura, M.
Shinohara, H.
Sakurai, T.
description Temperature dependence of 256 within-die random gate delay variations in sub-threshold logic circuits is measured in 40-nm CMOS test chips. When the temperature is reduced from 25 ° C to -40 ° C, the sigma/average (σ/μ) of the gate delay at 0.3 V increases by 1.4 times. A newly developed model shows that σ/μ of the gate delay is proportional to 1/ T for the first time, where T is the absolute temperature.
doi_str_mv 10.1109/TCSII.2012.2231038
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1283982793</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6392909</ieee_id><sourcerecordid>1349438790</sourcerecordid><originalsourceid>FETCH-LOGICAL-c394t-d71fa998923065d41664d1115606f97f327a21cafd9f146014d250a951ffd1143</originalsourceid><addsrcrecordid>eNpdkLFOwzAQhi0EEqXwArBYYmFJ8dlOHI8ohVIpEkMDiMkyid26SpNiJ0J9e1JaMTDd6fT9p7sPoWsgEwAi74tsMZ9PKAE6oZQBYekJGkEcpxETEk73PZeREFyco4sQ1oRQSRgdoY9c-6XB765buSaaOoNnujN4amq9w2_aO925tgnYNXjRf0bFypuwausK5-3SlThzvuxdF7Duhsk3Lsxma7zuem8u0ZnVdTBXxzpGr0-PRfYc5S-zefaQRyWTvIsqAVZLmUrKSBJXHJKEVwAQJySxUlhGhaZQaltJCzwhwCsaEy1jsHbgOBuju8PerW-_ehM6tXGhNHWtG9P2QQHjkrNUDP-O0e0_dN32vhmuU0BTJlMqJBsoeqBK34bgjVVb7zba7xQQtbetfm2rvW11tD2Ebg4hZ4z5CyRMDp4l-wFWhXkH</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1283982793</pqid></control><display><type>article</type><title>Large Within-Die Gate Delay Variations in Sub-Threshold Logic Circuits at Low Temperature</title><source>IEEE Xplore (Online service)</source><creator>Takahashi, R. ; Takata, H. ; Yasufuku, T. ; Fuketa, H. ; Takamiya, M. ; Nomura, M. ; Shinohara, H. ; Sakurai, T.</creator><creatorcontrib>Takahashi, R. ; Takata, H. ; Yasufuku, T. ; Fuketa, H. ; Takamiya, M. ; Nomura, M. ; Shinohara, H. ; Sakurai, T.</creatorcontrib><description>Temperature dependence of 256 within-die random gate delay variations in sub-threshold logic circuits is measured in 40-nm CMOS test chips. When the temperature is reduced from 25 ° C to -40 ° C, the sigma/average (σ/μ) of the gate delay at 0.3 V increases by 1.4 times. A newly developed model shows that σ/μ of the gate delay is proportional to 1/ T for the first time, where T is the absolute temperature.</description><identifier>ISSN: 1549-7747</identifier><identifier>EISSN: 1558-3791</identifier><identifier>DOI: 10.1109/TCSII.2012.2231038</identifier><identifier>CODEN: ICSPE5</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Chips ; Circuits ; CMOS ; Delay ; Delay variations ; Delays ; device matrix array (DMA) ; Gates ; Integrated circuit modeling ; Logic circuits ; Logic gates ; Low voltage ; Semiconductor device measurement ; sub-threshold ; Temperature ; Temperature dependence ; Temperature measurement ; Voltage measurement</subject><ispartof>IEEE transactions on circuits and systems. II, Express briefs, 2012-12, Vol.59 (12), p.918-921</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c394t-d71fa998923065d41664d1115606f97f327a21cafd9f146014d250a951ffd1143</citedby><cites>FETCH-LOGICAL-c394t-d71fa998923065d41664d1115606f97f327a21cafd9f146014d250a951ffd1143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6392909$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,54777</link.rule.ids></links><search><creatorcontrib>Takahashi, R.</creatorcontrib><creatorcontrib>Takata, H.</creatorcontrib><creatorcontrib>Yasufuku, T.</creatorcontrib><creatorcontrib>Fuketa, H.</creatorcontrib><creatorcontrib>Takamiya, M.</creatorcontrib><creatorcontrib>Nomura, M.</creatorcontrib><creatorcontrib>Shinohara, H.</creatorcontrib><creatorcontrib>Sakurai, T.</creatorcontrib><title>Large Within-Die Gate Delay Variations in Sub-Threshold Logic Circuits at Low Temperature</title><title>IEEE transactions on circuits and systems. II, Express briefs</title><addtitle>TCSII</addtitle><description>Temperature dependence of 256 within-die random gate delay variations in sub-threshold logic circuits is measured in 40-nm CMOS test chips. When the temperature is reduced from 25 ° C to -40 ° C, the sigma/average (σ/μ) of the gate delay at 0.3 V increases by 1.4 times. A newly developed model shows that σ/μ of the gate delay is proportional to 1/ T for the first time, where T is the absolute temperature.</description><subject>Chips</subject><subject>Circuits</subject><subject>CMOS</subject><subject>Delay</subject><subject>Delay variations</subject><subject>Delays</subject><subject>device matrix array (DMA)</subject><subject>Gates</subject><subject>Integrated circuit modeling</subject><subject>Logic circuits</subject><subject>Logic gates</subject><subject>Low voltage</subject><subject>Semiconductor device measurement</subject><subject>sub-threshold</subject><subject>Temperature</subject><subject>Temperature dependence</subject><subject>Temperature measurement</subject><subject>Voltage measurement</subject><issn>1549-7747</issn><issn>1558-3791</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNpdkLFOwzAQhi0EEqXwArBYYmFJ8dlOHI8ohVIpEkMDiMkyid26SpNiJ0J9e1JaMTDd6fT9p7sPoWsgEwAi74tsMZ9PKAE6oZQBYekJGkEcpxETEk73PZeREFyco4sQ1oRQSRgdoY9c-6XB765buSaaOoNnujN4amq9w2_aO925tgnYNXjRf0bFypuwausK5-3SlThzvuxdF7Duhsk3Lsxma7zuem8u0ZnVdTBXxzpGr0-PRfYc5S-zefaQRyWTvIsqAVZLmUrKSBJXHJKEVwAQJySxUlhGhaZQaltJCzwhwCsaEy1jsHbgOBuju8PerW-_ehM6tXGhNHWtG9P2QQHjkrNUDP-O0e0_dN32vhmuU0BTJlMqJBsoeqBK34bgjVVb7zba7xQQtbetfm2rvW11tD2Ebg4hZ4z5CyRMDp4l-wFWhXkH</recordid><startdate>20121201</startdate><enddate>20121201</enddate><creator>Takahashi, R.</creator><creator>Takata, H.</creator><creator>Yasufuku, T.</creator><creator>Fuketa, H.</creator><creator>Takamiya, M.</creator><creator>Nomura, M.</creator><creator>Shinohara, H.</creator><creator>Sakurai, T.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20121201</creationdate><title>Large Within-Die Gate Delay Variations in Sub-Threshold Logic Circuits at Low Temperature</title><author>Takahashi, R. ; Takata, H. ; Yasufuku, T. ; Fuketa, H. ; Takamiya, M. ; Nomura, M. ; Shinohara, H. ; Sakurai, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c394t-d71fa998923065d41664d1115606f97f327a21cafd9f146014d250a951ffd1143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Chips</topic><topic>Circuits</topic><topic>CMOS</topic><topic>Delay</topic><topic>Delay variations</topic><topic>Delays</topic><topic>device matrix array (DMA)</topic><topic>Gates</topic><topic>Integrated circuit modeling</topic><topic>Logic circuits</topic><topic>Logic gates</topic><topic>Low voltage</topic><topic>Semiconductor device measurement</topic><topic>sub-threshold</topic><topic>Temperature</topic><topic>Temperature dependence</topic><topic>Temperature measurement</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takahashi, R.</creatorcontrib><creatorcontrib>Takata, H.</creatorcontrib><creatorcontrib>Yasufuku, T.</creatorcontrib><creatorcontrib>Fuketa, H.</creatorcontrib><creatorcontrib>Takamiya, M.</creatorcontrib><creatorcontrib>Nomura, M.</creatorcontrib><creatorcontrib>Shinohara, H.</creatorcontrib><creatorcontrib>Sakurai, T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on circuits and systems. II, Express briefs</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takahashi, R.</au><au>Takata, H.</au><au>Yasufuku, T.</au><au>Fuketa, H.</au><au>Takamiya, M.</au><au>Nomura, M.</au><au>Shinohara, H.</au><au>Sakurai, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Large Within-Die Gate Delay Variations in Sub-Threshold Logic Circuits at Low Temperature</atitle><jtitle>IEEE transactions on circuits and systems. II, Express briefs</jtitle><stitle>TCSII</stitle><date>2012-12-01</date><risdate>2012</risdate><volume>59</volume><issue>12</issue><spage>918</spage><epage>921</epage><pages>918-921</pages><issn>1549-7747</issn><eissn>1558-3791</eissn><coden>ICSPE5</coden><abstract>Temperature dependence of 256 within-die random gate delay variations in sub-threshold logic circuits is measured in 40-nm CMOS test chips. When the temperature is reduced from 25 ° C to -40 ° C, the sigma/average (σ/μ) of the gate delay at 0.3 V increases by 1.4 times. A newly developed model shows that σ/μ of the gate delay is proportional to 1/ T for the first time, where T is the absolute temperature.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSII.2012.2231038</doi><tpages>4</tpages></addata></record>
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ispartof IEEE transactions on circuits and systems. II, Express briefs, 2012-12, Vol.59 (12), p.918-921
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1558-3791
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source IEEE Xplore (Online service)
subjects Chips
Circuits
CMOS
Delay
Delay variations
Delays
device matrix array (DMA)
Gates
Integrated circuit modeling
Logic circuits
Logic gates
Low voltage
Semiconductor device measurement
sub-threshold
Temperature
Temperature dependence
Temperature measurement
Voltage measurement
title Large Within-Die Gate Delay Variations in Sub-Threshold Logic Circuits at Low Temperature
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T21%3A22%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Large%20Within-Die%20Gate%20Delay%20Variations%20in%20Sub-Threshold%20Logic%20Circuits%20at%20Low%20Temperature&rft.jtitle=IEEE%20transactions%20on%20circuits%20and%20systems.%20II,%20Express%20briefs&rft.au=Takahashi,%20R.&rft.date=2012-12-01&rft.volume=59&rft.issue=12&rft.spage=918&rft.epage=921&rft.pages=918-921&rft.issn=1549-7747&rft.eissn=1558-3791&rft.coden=ICSPE5&rft_id=info:doi/10.1109/TCSII.2012.2231038&rft_dat=%3Cproquest_cross%3E1349438790%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c394t-d71fa998923065d41664d1115606f97f327a21cafd9f146014d250a951ffd1143%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1283982793&rft_id=info:pmid/&rft_ieee_id=6392909&rfr_iscdi=true