Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy

In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. We have extended these stress-deflection relations in the case of nonlinear stress fields and va...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials research 2013-01, Vol.28 (1), p.104-112
Main Authors: Camarda, Massimo, Anzalone, Ruggero, Severino, Andrea, Piluso, Nicolò, Canino, Andrea, La Via, Francesco, La Magna, Antonino
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Approximation
Biomaterials
Correlation analysis
Inorganic Chemistry
Materials Engineering
Materials research
Materials Science
Measurement techniques
Microstructure
Nanotechnology
Residual stress
Stress analysis
Stress measurement
Studies
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. We have extended these stress-deflection relations in the case of nonlinear stress fields and validated the results with the aid of finite element simulations. We use this theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100) and discovered that, due to defects generated on the silicon substrate during the carbonization process, wafer curvature techniques alone may not enable determination of the stress field in the grown films either quantitatively or qualitatively.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2012.264