Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

To understand the impact that the growth rate has on the residual stress of chemical vapor deposition-grown 3C–SiC heteroepitaxial films on Si substrates, growth experiments were performed. The film thickness was held constant at ∼2.5 μm independent of the growth rate so as to allow for direct film...

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Bibliographic Details
Published in:Journal of materials research 2013-01, Vol.28 (1), p.129-135
Main Authors: Anzalone, Ruggero, Camarda, Massimo, Locke, Christopher, Carballo, Josè, Piluso, Nicolò, La Magna, Antonino, Volinsky, Alex A., Saddow, Stephen E., La Via, Francesco
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Batch processing
Biomaterials
Chemical vapor deposition
Gases
Growth rate
Inorganic Chemistry
Materials Engineering
Materials research
Materials Science
Microelectronics
Nanotechnology
Residual stress
Silicon
Silicon carbide
Spectrum analysis
Stress analysis
Studies
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Summary:To understand the impact that the growth rate has on the residual stress of chemical vapor deposition-grown 3C–SiC heteroepitaxial films on Si substrates, growth experiments were performed. The film thickness was held constant at ∼2.5 μm independent of the growth rate so as to allow for direct film comparison as a function of the growth rate. Stress analysis performed by profilometer curvature measurement, μιχρο-Raman shift analysis and micro-machined freestanding structures, show an apparent disagreement about the stress nature. This incongruity between the experimental data can be explained assuming a strong stress field located in the substrate related to defects generated in the silicon during the growth process.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2012.224