Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

A new method to characterize the strain status in the electrical degradation of AlGaN/GaN heterojunction field‐effect transistors (HFETs) using micro‐Raman spectroscopy at a wavelength of 532 nm was proposed. This method was applied to the devices stressed under different dc biased configurations to...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2012-06, Vol.209 (6), p.1174-1178
Main Authors: Dun, Shaobo, Jiang, Yang, Li, Jingqiang, Fang, Yulong, Yin, Jiayun, Liu, Bo, Wang, Jingjing, Chen, Hong, Feng, Zhihong, Cai, Shujun
Format: Article
Language:English
Subjects:
AlGaN/GaN HFETs
inverse piezoelectric effect
micro-Raman
R&D
Research & development
Semiconductors
Spectrum analysis
strain relaxation
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Summary:A new method to characterize the strain status in the electrical degradation of AlGaN/GaN heterojunction field‐effect transistors (HFETs) using micro‐Raman spectroscopy at a wavelength of 532 nm was proposed. This method was applied to the devices stressed under different dc biased configurations to find the direct evidence of strain relaxation due to inverse piezoelectric effect (IPE). It was observed that the strain relaxation in AlGaN barrier layers became more severe with the increment of the electric field applied externally, which would lead to the rise of the gate leakage current. The deterioration of the gate leakage current shows a time‐dependent feature.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201127553