Recombination via point defects and their complexes in solar silicon

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2012-10, Vol.209 (10), p.1884-1893
Main Authors: Peaker, A. R., Markevich, V. P., Hamilton, B., Parada, G., Dudas, A., Pap, A., Don, E., Lim, B., Schmidt, J., Yu, L., Yoon, Y., Rozgonyi, G.
Format: Article
Language:English
Subjects:
Laplace deep level transient spectroscopy
minority carrier lifetime
passivation
Photovoltaic cells
Point defects
recombination
silicon solar cells
Solar energy
transition metals
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Description
Summary:Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201200216