Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires

We report the growth of graded InGaN nanowires by plasma-assisted molecular beam epitaxy. Wire composition is linearly graded from InN to GaN along the length of each wire. The large lattice mismatch between GaN and InN (11%) introduces tensile strain in the graded region, which results in cracking...

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Bibliographic Details
Published in:Journal of electronic materials 2013-05, Vol.42 (5), p.863-867
Main Authors: Laskar, Masihhur R., Carnevale, Santino D., Sarwar, A. T. M. Golam, Phillips, Patrick J., Mills, Michael J., Myers, Roberto C.
Format: Article
Language:English
Subjects:
Applied sciences
Characterization and Evaluation of Materials
Chemistry and Materials Science
Cross-disciplinary physics: materials science
rheology
Electrical engineering
Electronics
Electronics and Microelectronics
Exact sciences and technology
Instrumentation
Materials
Materials Science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Nanoscale materials and structures: fabrication and characterization
Nanowires
Optical and Electronic Materials
Physics
Quantum wires
Solid State Physics
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Summary:We report the growth of graded InGaN nanowires by plasma-assisted molecular beam epitaxy. Wire composition is linearly graded from InN to GaN along the length of each wire. The large lattice mismatch between GaN and InN (11%) introduces tensile strain in the graded region, which results in cracking of the wires. Growing with reverse grading (i.e., GaN to InN) results in crack-free nanowires. The composition is measured by energy-dispersive x-ray spectroscopy of individual nanowires performed in a scanning transmission electron microscope, and strain is measured by high-resolution x-ray diffraction.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-013-2544-9