Crystal recovery from Al-implantation induced damaging in 3C-SiC films

• Published in: Physica status solidi. PSS-RRL. Rapid research letters 2012-05, Vol.6 (5), p.226-228
• Main Authors: Severino, Andrea, Piluso, Nicolò, Marino, Antonio, La Via, Francesco
• Format: Article
• Language: English
• Subjects: crystal recovery; high-temperature annealing; p-type implanted 3C-SiC; p‐type implanted 3C‐SiC, reciprocal space mapping, high‐temperature annealing, crystal recovery; reciprocal space mapping; Solid state physics; Thin film coatings
• ISSN: 1862-6254; 1862-6270
• DOI: 10.1002/pssr.201206064

Damaging in Al‐implanted 3C‐SiC and subsequent crystal recovery due to thermal treatments up to 1350 °C are evaluated by X‐ray diffraction and micro‐Raman spectroscopy. Reciprocal space mapping of (004) 3C‐SiC planes shows a low‐intensity implantation‐induced secondary peak at higher interplanar spacing in the as‐implanted 3C‐SiC sample, with a generated misfit between the implanted and the epitaxial region of about 0.6%. Increasing the annealing temperature from 950 °C to 1350 °C, the secondary peak is gradually re‐absorbed within the epitaxial 3C‐SiC reciprocal lattice point. Finally, the disappearance of the secondary peak after a 1350 °C thermal treatment is observed. Thus, implantation‐induced average strain, resulting in a severe 3C‐SiC deforma‐ tion, has been totally relieved at the highest annealing temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Implantation of aluminum ions is required for the definition of p‐doped regions in 3C‐SiC based MOSFETs. In this Letter, XRD reciprocal space mapping (RSM) has been applied to evaluate crystal deformation, damaging and recovery of 3C‐SiC induced by implantation and subsequent thermal treatments. The crystal quality was restored to the initial conditions after high‐temperature annealing. Suitability of RSM analysis to evaluate the recovery from damaging has been proved.