Properties of nitride-based photovoltaic cells under concentrated light illumination

We investigated the properties of nitride‐based solar cells under concentrated light illumination from 1 to 200 suns. The conversion efficiency of our solar cells increased with increasing concentration up to 200 suns. The short‐circuit cur‐ rent density, open‐circuit voltage, fill factor, and conve...

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Published in:Physica status solidi. PSS-RRL. Rapid research letters 2012-04, Vol.6 (4), p.145-147
Main Authors: Yamamoto, Shota, Mori, Mikiko, Kuwahara, Yosuke, Fujii, Takahiro, Nakao, Tatsuo, Kondo, Shinichiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Format: Article
Language:English
Subjects:
concentrator cells
GaInN
Light
nitride semiconductors
Photovoltaic cells
solar cells
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Summary:We investigated the properties of nitride‐based solar cells under concentrated light illumination from 1 to 200 suns. The conversion efficiency of our solar cells increased with increasing concentration up to 200 suns. The short‐circuit cur‐ rent density, open‐circuit voltage, fill factor, and conversion efficiency were 510 mA/cm2, 1.9 V, 70%, and 3.4%, respectively, under an air mass filter of 1.5G at 200 suns and room temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) In this Letter the properties of nitride‐based solar cells under concentrated light illumination from 1 to 200 suns are investigated. The conversion efficiency of solar cells increased with increasing concentration up to 200 suns. The short‐circuit current density, open‐circuit voltage, fill factor, and conversion efficiency were 510 mA/cm2, 1.9 V, 70%, and 3.4%, respectively, under an air mass filter of 1.5G at 200 suns and room temperature.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201206038