Selecting Single Photon Avalanche Diode (SPAD) Passive-Quenching Resistance: An Approach

An approach useful for designing the passive quenching circuitry of single-photon avalanche diodes (SPADs) is presented. A method is introduced which enables a chip designer to correctly select the appropriate resistance of the passive quenching component of the chip. The range of external resistanc...

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Bibliographic Details
Published in:IEEE sensors journal 2013-06, Vol.13 (6), p.2322-2328
Main Authors: Savuskan, V., Javitt, M., Visokolov, G., Brouk, I., Nemirovsky, Y.
Format: Article
Language:English
Subjects:
Avalanche diodes
Chips
CMOS SPAD
Diodes
Direct current
Electrical resistance measurement
Junctions
Mathematical model
passive quenching
Photon avalanches
Quenching
Resistance
Resistors
Sensors
single photon avalanche diode (SPAD)
Transient analysis
Volt-ampere characteristics
Voltage measurement
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Description
Summary:An approach useful for designing the passive quenching circuitry of single-photon avalanche diodes (SPADs) is presented. A method is introduced which enables a chip designer to correctly select the appropriate resistance of the passive quenching component of the chip. The range of external resistance required for adequate quenching can be determined solely from the measured dc I-V characteristics of the SPAD. The tradeoff between various allowable values of resistance is discussed.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2013.2253603