A Dual-Gate Graphene FET Model for Circuit Simulation-SPICE Implementation

This paper presents a SPICE compatible model of a dual-gate bilayer graphene field-effect transistor. The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed-form analytical equations that define the boundary po...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2013-05, Vol.12 (3), p.427-435
Main Authors: Umoh, I. J., Kazmierski, T. J., Al-Hashimi, B. M.
Format: Article
Language:English
Subjects:
Ambipolar and unipolar conduction
Applied sciences
Channels
Circuits
Computer simulation
Electric potential
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Graphene
graphene device model
hole and electron conduction
Integrated circuit modeling
Mathematical analysis
Mathematical model
Mathematical models
Quantum capacitance
saturation displacement current
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SPICE implementation
Theoretical study. Circuits analysis and design
Transistors
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Summary:This paper presents a SPICE compatible model of a dual-gate bilayer graphene field-effect transistor. The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed-form analytical equations that define the boundary points between the regions to ensure Jacobian continuity for efficient circuit simulator implementation. A saturation displacement current is proposed to model the drain current when the channel becomes ambipolar. The model proposes a quantum capacitance that varies with the surface potential. The model has been implemented in Berkeley SPICE-3, and it shows a good agreement against experimental data with the normalized root-mean-square error less than 10%.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2013.2253490