Narrow-bandgap CuIn3Te5 thin-film solar cells

ABSTRACT We propose CuIn3Te5 as a ternary semiconductor material for narrow‐bandgap thin‐film solar cells. Well‐developed CuIn3Te5 grains were obtained at a substrate temperature of 250 °C by single‐step co‐evaporation. The best solar cell that was fabricated using 4·0‐µm‐thick CuIn3Te5 layers grown...

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Bibliographic Details
Published in:Progress in photovoltaics 2013-06, Vol.21 (4), p.754-759
Main Authors: Mise, Takahiro, Nakada, Tokio
Format: Article
Language:English
Subjects:
Applied sciences
copper indium telluride
CuIn3Te5
Energy
Exact sciences and technology
low-temperature fabrication
narrow gap
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:ABSTRACT We propose CuIn3Te5 as a ternary semiconductor material for narrow‐bandgap thin‐film solar cells. Well‐developed CuIn3Te5 grains were obtained at a substrate temperature of 250 °C by single‐step co‐evaporation. The best solar cell that was fabricated using 4·0‐µm‐thick CuIn3Te5 layers grown at 250 °C yielded a total area efficiency of 6·92% (Voc = 407 mV, Jsc = 33·1 mA/cm2, and FF = 0·514). To clarify the loss in the device performance, the cell was compared with a standard CuInSe2 reference cell. A band diagram of the CdS/CuIn3Te5 solar cell was also presented. Copyright © 2011 John Wiley & Sons, Ltd. We propose CuIn3Te5 as a ternary semiconductor material for narrow‐bandgap thin‐film solar cells. Well‐developed CuIn3Te5 grains were obtained at a substrate temperature of 250 °C. The best solar cell that was fabricated using 4·0‐µm‐thick CuIn3Te5 layers grown at 250 °C yielded a total area efficiency of 6·92% (Voc = 407 mV, Jsc = 33·1 mA/cm2, and FF = 0·514). A band diagram of the ZnO/CdS/CuIn3Te5 solar cell was also presented.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.1191