Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays

In this paper, experimental results of laser-irradiance-dependent polarity inversion of laser beam induced current (LBIC) for As-doped long-wavelength HgCdTe pixel arrays grown on CdZnTe are reported. Models for the ion-implant-induced junction transformation are proposed, and demonstrated using num...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2013-09, Vol.19 (5), p.1-7
Main Authors: Hu, Wei-Da, Chen, Xiao-Shuang, Ye, Zhen-Hua, Feng, A-Li, Yin, Fei, Zhang, Bo, Liao, Lei, Lu, Wei
Format: Article
Language:English
Subjects:
Arrays
Cadmium compounds
device simulation
HgCdTe long wave infrared detector
Intermetallics
Ion implantation
junction transformation
Junctions
Laser beam induced current
Laser modes
Lasers
Mathematical models
Measurement by laser beam
Mercury compounds
Numerical models
Pixels
Reversion
Semiconductor lasers
Tellurides
Temperature measurement
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, experimental results of laser-irradiance-dependent polarity inversion of laser beam induced current (LBIC) for As-doped long-wavelength HgCdTe pixel arrays grown on CdZnTe are reported. Models for the ion-implant-induced junction transformation are proposed, and demonstrated using numerical simulations. The novel trap-related p-n junction transformation induced by ion implantation is observed under typical laser irradiances for low temperature. The implantation-induced traps and Hg interstitial diffusion are key factors for inducing the LBIC coupling, polarity reversion, and junction broadening at different laser irradiances. The trap type, trap density, and junction configuration are extracted from the measured experiment data. The results provide the near room-temperature HgCdTe photovoltaic detector with a reliable reference on the junction reversion and broadening around implanted regions, as well as controlling the n-on-p junction formation for very long wavelength HgCdTe infrared detector pixels.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2013.2257992