Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability

Time-dependent dielectric breakdown and stress-induced leakage current (SILC) behavior of a 28-nm hafnium-based high-k/metal gate n-type MOS transistors are investigated under dc and ac conditions. Compared with the constant voltage stress results under dc conditions, a decrease in device lifetime i...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-07, Vol.60 (7), p.2368-2371
Main Authors: Knebel, S., Kupke, S., Schroeder, U., Slesazeck, S., Mikolajick, T., Agaiby, R., Trentzsch, M.
Format: Article
Language:English
Subjects:
Applied sciences
Electric breakdown
Electronics
Exact sciences and technology
High K dielectric materials
High-k dielectrics
Logic gates
metal gate
Metals
oxygen vacancies
Reliability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
stress-induced leakage current (SILC)
time-dependent dielectric breakdown (TDDB)
Transistors
Voltage measurement
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Summary:Time-dependent dielectric breakdown and stress-induced leakage current (SILC) behavior of a 28-nm hafnium-based high-k/metal gate n-type MOS transistors are investigated under dc and ac conditions. Compared with the constant voltage stress results under dc conditions, a decrease in device lifetime is observed for low-frequency ac stress. Degradation enhancement and SILC behavior are attributed to defect generation in the SiO 2 interface layer. For high-frequency ac stress, a lifetime improvement is observed, because of reduced trap generation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2264104