A 0.8 [micro]m CMOS pixel IC for low energy X-ray spectroscopy with on-chip detector

The overall measured gain is 500 mV/fC; the ENC is 15.3e rms@15 fF; the power dissipation is 1.5 mW@3.3 V with 30 pF load capacitance; the active die area is 270 [micro]m x 270 [micro]m. A detector has been integrated on the same substrate with the electronics.

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2000-06, Vol.47 (3), p.806
Main Authors: Kapnistis, C, Misiakos, K, Haralabidis, N, Karydas, A.G
Format: Article
Language:English
Subjects:
Spectrum analysis
Online Access:Get full text
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Description
Summary:The overall measured gain is 500 mV/fC; the ENC is 15.3e rms@15 fF; the power dissipation is 1.5 mW@3.3 V with 30 pF load capacitance; the active die area is 270 [micro]m x 270 [micro]m. A detector has been integrated on the same substrate with the electronics.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.856521