A 2-V 300-MHz 1-Mb current-sensed double-density SRAM for low-power 0.3-[micro]m CMOS/SIMOX ASICs

A 64 K-wordsx16-bits SRAM test chip, fabricated with the 0.3-[micro]m pseudomulti-Vth CMOS/SIMOX process (a short gate length of 0.2 [micro]m is available for the fully depleted MOSFETs), has demonstrated the 300-MHz operation under a typical condition with 2- and 1-V power supplies.

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2001-10, Vol.36 (10), p.1524
Main Authors: Shibata, N, Wantanabe, M, Sato, Y, Ishihara, T, Komine, Y
Format: Article
Language:English
Subjects:
Semiconductors
Online Access:Get full text
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Description
Summary:A 64 K-wordsx16-bits SRAM test chip, fabricated with the 0.3-[micro]m pseudomulti-Vth CMOS/SIMOX process (a short gate length of 0.2 [micro]m is available for the fully depleted MOSFETs), has demonstrated the 300-MHz operation under a typical condition with 2- and 1-V power supplies.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.953481