Deposition and characterization of nanostructured Cu2O thin-film for potential photovoltaic applications

Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu2O thin films...

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Bibliographic Details
Published in:Journal of materials research 2013-07, Vol.28 (13), p.1740-1746
Main Authors: Gupta, Nishant, Singh, Rajendra, Wu, Fan, Narayan, Jagdish, McMillen, Colin, Alapatt, Githin F., Poole, Kelvin F., Hwu, Shiou-Jyh, Sulejmanovic, Dino, Young, Matthew, Teeter, Glenn, Ullal, Harin S.
Format: Article
Language:English
Subjects:
Aluminum
Analysis
Applied and Technical Physics
Biomaterials
Chemical vapor deposition
Copper
Efficiency
Inorganic Chemistry
Manufacturing
Materials Engineering
Materials research
Materials Science
Nanotechnology
Organic chemicals
Photovoltaic cells
Raw materials
Semiconductors
Silicon wafers
Studies
Thin films
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Summary:Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu2O thin films on n-type silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu2O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu2O thin films. Transmission electron spectroscopy results show that the Cu2O film grows in the form of three-dimensional islands composed of smaller nanocrystalline grains in the range of 10–20 nm. I–V measurements indicate that the Cu2O/n-Si device fabricated using the MOCVD process has a lower dark current density than other devices reported in the literature.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2013.150