High-Energy-Storage Density Capacitors of Bi(Ni^sub 1/2^Ti^sub 1/2^)O^sub 3^-PbTiO^sub 3^ Thin Films with Good Temperature Stability

High-energy-storage density capacitors with thin films of 0.5Bi(...)O...-0.5PbTiO... (BNT-PT) were fabricated by chemical solution deposition technique on Pt/Ti/SiO.../Si substrates. The dense thin films with pure-phase perovskite structure could be obtained by annealing at 750...C. High capacitance...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2013-07, Vol.96 (7), p.2061
Main Authors: Xie, Zhenkun, Peng, Bin, Meng, Siqin, Zhou, Yuanyuan, Yue, Zhenxing
Format: Article
Language:English
Subjects:
Annealing
Electric power
Perovskite
Temperature effects
Thin films
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Summary:High-energy-storage density capacitors with thin films of 0.5Bi(...)O...-0.5PbTiO... (BNT-PT) were fabricated by chemical solution deposition technique on Pt/Ti/SiO.../Si substrates. The dense thin films with pure-phase perovskite structure could be obtained by annealing at 750...C. High capacitance density (~1925 nF/cm2 at 1 kHz) and extremely high-energy density (~45.1 J/cm3) under an electric field of 2250 kV/cm were achieved at room temperature. The energy-storage density and efficiency varied little in a wide temperature range from -190...C to 250...C. The high-energy-storage density and good temperature stability make BNT-PT films promising candidates for high power electric applications. (ProQuest: ... denotes formulae/symbols omitted.)
ISSN:0002-7820
1551-2916