Evolution of Hydride Components Generated by Hydrogen Plasma Irradiation of a Si(110) Surface Investigated With In Situ Infrared Absorption Spectroscopy in Multiple Internal Reflection Geometry

The process of hydrogen plasma reacting with a Si(110) surface is investigated. The reaction process is measured with in situ infrared absorption spectroscopy (IRAS) in multiple internal reflection geometry. We monitor the evolution of hydride components in the Si(110) surface exposed to the hydroge...

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Bibliographic Details
Published in:IEEE transactions on plasma science 2013-08, Vol.41 (8), p.1878-1883
Main Authors: Shinohara, Masanori, Takami, Yoshiki, Takabayashi, Susumu, Oda, Akinori, Matsuda, Yoshinobu, Fujiyama, Hiroshi
Format: Article
Language:English
Subjects:
Amorphous
Amorphous silicon
Crystals
defect
Hydrogen
hydrogen plasma
Plasma physics
Silicon
silicon hydride
Substrates
Surface morphology
vacancy
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Summary:The process of hydrogen plasma reacting with a Si(110) surface is investigated. The reaction process is measured with in situ infrared absorption spectroscopy (IRAS) in multiple internal reflection geometry. We monitor the evolution of hydride components in the Si(110) surface exposed to the hydrogen plasma. IRAS data show that the surface atomic arrangement of a Si(110) surface is distorted by plasma exposure. H is inserted into Si crystal and defects and vacancies are generated. Further, hydrogen plasma exposure creates silicon dihydride ({\rm SiH}_{2}) components in an amorphous layer. The {\rm SiH}_{2} formation rate is 0.5, by a comparison with the hydrogen plasma exposure time.
ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2013.2263850