Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

In this study, we uncover a recombination‐active grown‐in defect reducing the minority carrier lifetime of Czochralski grown n‐type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de‐activated by annealing between 300 °C and 360 °C. Our experimental findings suggest that...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2013-09, Vol.7 (9), p.616-618
Main Authors: Rougieux, F. E., Grant, N. E., Macdonald, D.
Format: Article
Language:English
Subjects:
annealing
carrier lifetime
point defects
silicon
Silicon wafers
Thermal energy
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Summary:In this study, we uncover a recombination‐active grown‐in defect reducing the minority carrier lifetime of Czochralski grown n‐type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de‐activated by annealing between 300 °C and 360 °C. Our experimental findings suggest that vacancy‐related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) In this study, the authors uncover a recombination‐active grown‐in defect reducing the minority carrier lifetime of Czochralski grown n‐type silicon from 5 ms to below 2 ms. They also show that the defect can be de‐activated by annealing between 300 °C and 360 °C, demonstrating the need to mitigate this defect for solar cell processes, especially hetero‐junction solar cells processed at low temperatures. The experimental findings suggest that vacancy‐related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201308053