Electrical characterization of liquid-phase-deposited SiON on (NH4)2S-treated GaAs

The electrical characteristics of liquid‐phase‐deposited (LPD) silicon oxynitride film on ammonium‐sulfide‐treated p‐type (100) gallium arsenide (GaAs) substrate were investigated. Hydrofluosilicic acid, ammonia, and boric acid aqueous solutions were used as precursors. The electrical characteristic...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2013-09, Vol.210 (9), p.1762-1767
Main Authors: Yen, Chih-Feng, Lee, Jung-Chan, Cheng, Chi-Hsuan, Lee, Ming-Kwei
Format: Article
Language:English
Subjects:
ammonium sulfide
GaAs
liquid phase deposition
SiON
surface passivation
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Summary:The electrical characteristics of liquid‐phase‐deposited (LPD) silicon oxynitride film on ammonium‐sulfide‐treated p‐type (100) gallium arsenide (GaAs) substrate were investigated. Hydrofluosilicic acid, ammonia, and boric acid aqueous solutions were used as precursors. The electrical characteristics of silicon oxynitride film are a function of the boric acid volume in the growth solution and much improved on GaAs substrate with ammonium‐sulfide treatment. The leakage currents can reach 1.24 × 10−7 and 7.85 × 10−7 A cm−2 at ±0.5 MV cm−1. The lowest interface state density and the dielectric constant are 3.32 × 1011 cm−2 eV−1 and 4.74, respectively.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201228592