Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons

ABSTRACT This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irr...

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Bibliographic Details
Published in:Progress in photovoltaics 2013-11, Vol.21 (7), p.1499-1506
Main Authors: Sato, Shin-ichiro, Sai, Hitoshi, Ohshima, Takeshi, Imaizumi, Mitsuru, Shimazaki, Kazunori, Kondo, Michio
Format: Article
Language:English
Subjects:
amorphous silicon solar cell
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
proton irradiation
radiation degradation
Solar cells. Photoelectrochemical cells
Solar energy
space application
temperature influence
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Summary:ABSTRACT This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short‐circuit current, open‐circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short‐circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a‐Si : H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests. Copyright © 2012 John Wiley & Sons, Ltd. Temperature influence on radiation degradation of a‐Si:H solar cell is clarified using in‐situ I‐V measurement techniques. The radiation degradation is strongly affected by irradiation temperature and the thermal recovery of radiation degradation always occurs even during irradiation. Both the irradiation rate and the temperature should be controlled in conducting irradiation tests of a‐Si:H solar cells for space use.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.2342