KrF EXCIMER LASER LITHOGRAPHY TECHNOLOGY FOR 64MDRAM

New KrF excimer laser resist was developed. The chemically amplified positive resist, named ASKA, attained high sensitivity (30mJ/cm2), high resolution (0.3micron) and high stability. This resist was successfully applied to the fabrication of 64M DRAM with KrF excimer laser stepper (N.A 0.42). This...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 1991, Vol.4(3), pp.361-369
Main Authors: ENDO, MASAYUKI, TANI, YOSHIYUKI, YABU, TOSHIKI, OKADA, SHOZO, SASAGO, MASARU, NOMURA, NOBORU
Format: Article
Language:English
Online Access:Get full text
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Summary:New KrF excimer laser resist was developed. The chemically amplified positive resist, named ASKA, attained high sensitivity (30mJ/cm2), high resolution (0.3micron) and high stability. This resist was successfully applied to the fabrication of 64M DRAM with KrF excimer laser stepper (N.A 0.42). This paper describes the chemistry and lithographic characteristics of ASKA, followed by the demonstration of actual pattern fabrication of 64M DRAM.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.4.361