EVALUATION OF QUARTER TO SUB-QUARTER MICRON PATTERNING IN X-RAY LITHOGRAPHY

The pattern replication characteristics in X-ray proximity lithography were investigated. Replication accuracy was evaluated as a function of proximity gap, pattern size and pattern density. It is found that 0.15μm lines and spaces can be delineated in the wide proximity gap range of 40 μm and that...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 1994, Vol.7(3), pp.551-560
Main Authors: Yamashita, Yoshio, Morigami, Mitsuaki, Watanabe, Takeo, Fujiwara, Shuji, Nishino, Junichi
Format: Article
Language:English
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Summary:The pattern replication characteristics in X-ray proximity lithography were investigated. Replication accuracy was evaluated as a function of proximity gap, pattern size and pattern density. It is found that 0.15μm lines and spaces can be delineated in the wide proximity gap range of 40 μm and that 0.2-μm-level pattern replication minimally depends on the pattern density. The 0.25-μm-level critical dimension (CD) of the resist pattern was measured over a 6" wafer and the CD variation (3σ) was 0.0134μm or ±5.4% for the linewidth. The resolution limit of X-ray proximity printing is discussed. Calculation results demonstrate that X-ray lithography has a high resolution of less than 0.1μm. Resolution of 0.1μm is confirmed by experimental results.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.7.551